E-Beam VB6 UHR-EWF

• Substrate: 4” and 6“ wafer; special piece parts (on request, minimum size 20 mm x 20 mm)
• High voltage: 100 kV
• Main field: ≤ 1310 μm
• Resolution: < 1 nm (depends on main field size)

E-Beam lithography in extremely thick PMMA (3200 nm) with structural details in submicron range (~ 200 nm)

E-Beam lithography down to 20 nm scale in PMMA (resist thickness < 100 nm).

Features

• Aspect ratio up to 10 depending on geometry
• Structural details ≥ 20 nm
• Resist thickness up to 3200 nm
  (e.g. for electroplating of high aspect ratio gold structures required for X-ray lithography)

Limitations/constraints

• Standard Resist: PMMA

Design rules

• Rounding of structural edges
• Design of dummy structures for stress reduction
• Homogeneous structure allocation (in case of subsequent electroplating)

Materials

Substrate materials: silicon, glass, metal
Other resist and substrate materials on request